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| (R) SMP30 TRISILTM FOR TELECOM EQUIPMENT PROTECTION FEATURES Bidirectional crowbar protection Voltage range from 62V to 270V Low capacitance from 10pF to 20pF typ.@ 50V Low leakage current: IR = 2A max. Holding current: IH = 150 mA min. Repetitive peak pulse current: IPP = 30 A (10/1000 s) MAIN APPLICATIONS Telecommunication equipment such as: Analog and digital line cards (xDSL, T1/E1, ISDN...). Terminals (phone, fax, modem...) and central office equipment. SMA (JEDEC DO-214AC) Table 1: Order Codes Part Number SMP30-62 SMP30-68 SMP30-100 SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-240 SMP30-270 Figure 1: Schematic Diagram DESCRIPTION The SMP30-xxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. The package / die size ratio has been optimized by using the SMA package. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459 and FCC part 68. Trisils have UL94 V0 approved resin. SMA package is JEDEC registered (DO-214AC). Trisils are UL497B approved (file: E136224). Marking QAA QAB QAC QAD QAE QAF QAG QAH QAI QAJ December 2004 REV. 6 1/9 SMP30 Table 2: In compliance with the following standards STANDARD GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20/K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 8000 15000 4000 2000 4000 2000 4000 4000 1500 800 1000 Waveform Voltage 2/10 s 10/1000 s 2/10 s 2/10 s 10/700 s 1/60 ns 10/700 s 1.2/50 s 10/700 s 1.2/50 s 10/160 s 10/560 s 9/720 s Required peak current (A) 500 100 500 100 150 37.5 Current waveform 2/10 s 10/1000 s 2/10 s 2/10 s 5/310 s Minimum serial resistor to meet standard () 20 24 40 0 110 0 0 0 60 10 18 0 60 18 26 15 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 s 1/20 s 5/310 s 8/20 s 10/160 s 10/560 s 5/320 s Table 3: Absolute Ratings (Tamb = 25C) Symbol IPP Parameter Repetitive peak pulse current (see figure 2) 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s 8/20 s t = 0.2 s t=1s t=2s t = 15 mn t = 16.6 ms t = 20 ms Value 30 70 35 40 45 70 100 2.5 14 10.5 9 3 5.7 4.9 -55 to 150 150 260 Unit A IFS ITSM Fail-safe mode : maximum current (note 1) Non repetitive surge peak on-state current (sinusoidal) kA A I2t Tstg Tj TL I2t value for fusing Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. A2s C C Note 1: in fail safe mode, the device acts as a short circuit. 2/9 SMP30 Table 4: Thermal Resistances Symbol Parameter Rth(j-a) Junction to ambient (with recommended footprint) Rth(j-l) Junction to leads Value 120 30 Unit C/W C/W Table 5: Electrical Characteristics (Tamb = 25C) Symbol VRM VBR VBO IRM IPP IBO IH VR IR C Parameter Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Continuous reverse voltage Leakage current at VR Capacitance IRM @ VRM Types max. A SMP30-62 SMP30-68 SMP30-100 SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-240 SMP30-270 Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: IR @ VR max. note1 Dynamic VBO max. note 2 Static VBO @ IBO max. max. note 3 IH min. note 4 C typ. note 5 C typ. note 6 2 V 56 61 90 108 117 162 180 198 216 243 A 5 V 62 68 100 120 130 180 200 220 240 270 V 85 93 135 160 173 235 262 285 300 350 V 82 90 133 160 173 240 267 293 320 360 mA mA 800 150 pF 20 20 16 16 14 12 12 10 10 10 pF 40 40 35 30 30 25 25 20 20 20 IR measured at VR guarantee VBR min VR see functional test circuit 1 see test circuit 2 see functional holding current test circuit 3 VR = 50V bias, VRMS=1V, F=1MHz VR = 2V bias, VRMS=1V, F=1MHz 3/9 SMP30 Figure 2: Pulse waveform Figure 3: Non repetitive surge peak on-state current versus overload duration ITSM(A) 25 F=50Hz % I PP 100 Repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s) 20 15 50 10 5 0 tr tp t t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Figure 4: On-state voltage versus on-state current (typical values) IT(A) 50 Figure 5: Relative variation of holding current versus junction temperature IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 20 10 5 Tj=25C 2 VT(V) 1 0 1 2 3 4 5 6 7 8 9 10 0.2 0.0 -40 -20 0 20 Tj(C) 40 60 80 100 120 Figure 6: Relative variation of breakover voltage versus junction temperature VBO[Tj] / VBO[Tj=25C] 1.10 Figure 7: Relative variation of leakage current versus junction temperature (typical values) IRM[Tj] / IRM[Tj=25C] 2000 1000 VR=VRM 1.05 100 1.00 270 V 10 0.95 62 V 0.90 -40 Tj(C) -20 0 20 40 60 80 100 Tj(C) 1 25 50 75 100 125 4/9 SMP30 Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35m, recommended pad layout) Zth(j-a)(C/W) Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values) C[VR] / C[VR=50V] 2.5 Tj=25C F=1MHz VRMS=1V 1E+2 Zth(j-a) 2.0 1.5 1.0 1E+1 1E+0 0.5 tp(s) 1E-1 1E-3 VR(V) 0.0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 1 2 5 10 20 50 100 300 Figure 10: Test circuit 1 for dynamic IBO and VBO parameters 100 V / s, di /dt < 10 A / s, Ipp = 30 A 2 45 66 470 83 0.36 nF 46 H U 10 F KeyTek 'System 2' generator with PN246I module 1 kV / s, di /dt < 10 A / s, Ipp = 10 A 26 H 250 12 47 46 H U 60 F KeyTek 'System 2' generator with PN246I module 5/9 SMP30 Figure 11: Test circuit 2 for IBO and VBO parameters K ton = 20ms R1 = 140 R2 = 240 220V 50Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 20ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with VBO < 200V VOUT = 250 VRMS, R1 = 140 Device with VBO 200V VOUT = 480 VRMS, R2 = 240 Figure 12: Test circuit 3 for dynamic IH parameter R Surge generator VBAT = - 48 V D.U.T This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current IPP = 10A, 10/1000s. 3/ The D.U.T. will come back off-state within 50ms maximum. 6/9 SMP30 Figure 13: Ordering Information Scheme SMP Trisil Surface Mount Repetitive Peak Pulse Current 30 = 30A Voltage 62 = 62V 30 - xxx Figure 14: SMA Package Mechanical data DIMENSIONS REF. A1 A2 b c E E1 D L Millimeters Min. 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 Figure 15: Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 7/9 SMP30 Table 6: Ordering Information Part Number SMP30-62 SMP30-68 SMP30-100 SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-240 SMP30-270 Marking QAA QAB QAC QAD QAE QAF QAG QAH QAI QAJ SMA 0.06 g 5000 Tape & reel Package Weight Base qty Delivery mode Table 7: Revision History Date November-2002 10-Nov-2004 13-Dec-2004 Revision 4B 5 6 Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106 inc.) to 2.03mm (0.080 inc.). Figure 7 text legend corrected from "... reverse voltage applied" to "... junction capacitance". Description of Changes 8/9 SMP30 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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